EM47FM3288SBA
ZQ Calibration Commands
ZQ Calibration command is used to calibrate DRAM Ron & ODT values. DDR3 SDRAM needs longer
time to calibrate output driver and on-die termination circuits at initialization and relatively smaller
time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This
command may be issued at any time by the controller depending on the system environment. ZQCL
command triggers the calibration engine inside the DRAM and, once calibration is achieved, the
calibrated values are transferred from the calibration engine to DRAM IO, which gets reflected as
updated output driver and on-die termination values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full
calibration and the transfer of values. All other ZQCL commands except the first ZQCL command
issued after RESET are allowed a timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature
variations. A shorter timing window is provided to perform the calibration and transfer of values as
defined by timing parameter tZQCS. One ZQCS command can effectively correct a minimum of 0.5
% (ZQ Correction) of RON and RTT impedance error within 64 nCK for all speed bins assuming the
maximum sensitivities specified in the ‘Output Driver Voltage and Temperature Sensitivity’ and ‘ODT
Voltage and Temperature Sensitivity’ tables. The appropriate interval between ZQCS commands can
be determined from these tables and other application-specific parameters. One method for
calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage
(Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval could
be defined by the following formula:
ZQCorrection
(TSens x Tdriftrate)+(VSens x Vdriftrate)
where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the
SDRAM temperature and voltage sensitivities.
For example, if TSens = 1.5% / oC, VSens = 0.15% / mV, Tdriftrate = 1 oC / sec and Vdriftrate = 15
mV /sec, then the interval between ZQCS commands is calculated as:
0.5/(1.5x1)+(0.15x15) = 0.133
≈
128 ms
No other activities should be performed on the DRAM channel by the controller for the duration of
tZQinit, tZQoper, or tZQCS. The quiet time on the DRAM channel allows accurate calibration of
output driver and on-die termination values. Once DRAM calibration is achieved, the DRAM should
disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the
controller. See “[BA=Bank Address, RA=Row Address, CA=Column Address, BC#=Burst Chop,
X=Don’t Care, V=Valid]” on page 33 for a description of the ZQCL and ZQCS commands.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self
Jul. 2012
12/40
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