EM44CM1688LBC
AC Operating Test Characteristics (Continued)
(VDD=1.8V 0.1V, TA=0°C ~70°C)
-25 (DDR2-800)
-3 (DDR2-667)
Symbol
Units
Parameter
Min.
0.4
Max.
Min.
0.4
45
Max.
Read Postamble
t
RPST
RAS
0.6
0.6
t
CK
Active to Precharge command period
Active to Active command period
Auto Refresh Row Cycle Time
Active to Read or Write delay
Precharge command period
Active bank A to B command period
Column address to column address delay
Write recover time
t
45
70k
70k
ns
ns
ns
ns
ns
ns
t
RC
57.5
127.5
12.5
12.5
10
-
-
-
-
-
-
-
60
-
-
-
-
-
-
-
t
RFC
127.5
15
t
RCD
RP
RRD
CCD
t
15
t
t
10
2
2
t
CK
tWR
15
15
ns
ns
Auto precharge write recovery + precharge
time
t
DAL
tRP + tWR
-
-
-
-
tRP + tWR
-
-
-
-
Exit active power-down mode to read
command (fast exit)
t
XARD
2
8-AL
2
2
7-AL
2
t
t
t
CK
CK
CK
Exit active power-down mode to read
command (slow exit)
t
XARDS
Exit precharge power-down to any non-read
command
t
XP
Internal write to read command delay
Internal read to precharge delay
t
WTR
RTP
7.5
-
7.5
-
ns
ns
ns
t
7.5
-
7.5
-
Exit self Refresh to non-read command
t
XSNR
XSRD
tRFC +10
-
-
tRFC +10
-
-
Exit self Refresh to read command
Average periodic refresh interval
CKE minimum pulse width
t
200
-
200
-
t
CK
t
REFI
7.8
-
7.8
-
us
t
CKE
3
3
t
CK
Four active to Row active delay (same bank)
OCD drive mode output delay
t
FAW
45
0
50
0
ns
ns
t
OIT
12
12
Dec. 2012
13/29
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