EM42BM1684RTC
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
Features
• Internal Double-Date-Rate architecture with 2
Accesses per clock cycle.
• VDD/VDDQ= 2.5V ± 0.2V
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• 2.5,3 Clock read latency
• Bi- directional, intermittent data strobe (DQS)
• All inputs except data and DM are sampled at the
positive edge of the system clock.
• Data Mask (DM) for write data Sequential &
Interleaved Burst type available
• Auto Precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ/DQS transitions with CLK transition
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
Description
The EM42BM1684RTC is high speed Synchronous
graphic RAM fabricated with ultra high performance
CMOS process containing 536,870,912 bits which
organized as 8Meg words x 4 banks by 16 bits. The
512Mb DDR SDRAM uses double data rate
architecture to accomplish high-speed operation. The
data path internally pre-fetches multiple bits and It
transfers the data for both rising and falling edges of
the system clock. It means the doubled data
bandwidth can be achieved at the I/O pins. Available
packages: TSOPII 66pin 400mil.
Ordering Information
Part No
EM42BM1684RTC-6F
EM42BM1684RTC-5F
EM42BM1684RTC-6FE
EM42BM1684RTC-5FE
Organization
Max. Freq
32M X 16
32M X 16
32M X 16
32M X 16
166MHz @CL2.5-3-3
200MHz @CL3-3-3
166MHz @CL2.5-3-3
200MHz @CL3-3-3
Package
TSOPII-66
TSOPII-66
TSOPII-66
TSOPII-66
Grade
Commercial
Commercial
Extended
Extended
Pb
Free
Free
Free
Free
Apr. 2012
2/23
www.eorex.com
EOREX [ EOREX CORPORATION ]
