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EM42AM3284LBC-75FE 参数 Datasheet PDF下载

EM42AM3284LBC-75FE图片预览
型号: EM42AM3284LBC-75FE
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB ( 4M 】 4Bank 】 32 ),双倍数据速率SDRAM [512Mb (4M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 291 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第7页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第8页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第9页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第10页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第12页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第13页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第14页浏览型号EM42AM3284LBC-75FE的Datasheet PDF文件第15页  
eorex  
EM42AM3284LBC  
AC Operating Test Characteristics (Continued)  
(VDD=1.8V±0.1V, TA=0°C ~70°C)  
-6  
-75  
Symbol  
Parameter  
Read Postamble  
Units  
Min.  
0.4  
Max.  
0.6  
Min.  
0.4  
Max.  
0.6  
tRPST  
tRAS  
tCK  
ns  
Active to Precharge command period  
42  
120k  
45  
120k  
tRC  
tRFC  
tRCD  
tRP  
Active to Active command period  
Auto Refresh Row Cycle Time  
Active to Read or Write delay  
Precharge command period  
72  
90  
24  
18  
75  
108  
30  
ns  
ns  
ns  
ns  
22.5  
tRRD  
tCCD  
Active bank A to B command period  
12  
1
15  
ns  
Column address to column address  
delay  
1
tCK  
tCDLW  
tDPL  
Last data in to Write command  
Last data in to Precharge command  
Burst stop to write delay  
1
3
3
1
3
3
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
us  
tBSTW  
tWPD  
tRPD  
Write to pre-charge delay(same bank) 3+BL/2  
3+BL/2  
Read to pre-charge delay(same bank)  
Exit self refresh to non-col. command  
Internal Write to Read command delay  
Write recovery  
BL/2  
20  
1
BL/2  
16  
1
tSREX  
tWTR  
tWRD  
tCKE  
2
2
CKE minimum pulse width  
2
2
tREFI  
Average periodic refresh interval  
7.8  
7.8  
Jun. 2009  
www.eorex.com  
11/24