EM42AM1684RTC
256Mb (4M
×
4Bank
×
16)
Double DATA RATE SDRAM
Features
• Internal Double-Date-Rate architecture with twice
accesses per clock cycle.
• Single 2.5V
±0.2V
Power Supply
• 2.5V SSTL-2 compatible I/O
• Burst Length (B/L) of 2, 4, 8
• 2.5, 3 clock read latency
• Bi-directional, intermittent data strobe (DQS)
• All inputs except data and DM are sampled at the
positive edge of the system clock.
• Data Mask (DM) for write data
• Sequential & Interleaved Burst type available
• Auto precharge option for each burst accesses
• DQS edge-aligned with data for Read cycles
• DQS center-aligned with data for Write cycles
• DLL aligns DQ & DQS transitions with CLK
transition
• Auto Refresh and Self Refresh
• 8,192 Refresh Cycles / 64ms
Description
The EM42AM1684RTC is high speed Synchronous
graphic
RAM
fabricated
CMOS
with
ultra
high
performance
process
containing
268,435,456 bits which organized as 4Meg words x
4 banks by 16 bits.
The 256Mb DDR SDRAM uses a double data rate
architecture to accomplish high-speed operation.
The data path internally prefetches multiple bits
and transfers the data for both rising and falling
edges of the system clock. It means the doubled
data bandwidth can be achieved at the I/O pins.
Available package: TSOPII 66P 400mil.
Ordering Information
Part No
EM42AM1684RTC-6F
EM42AM1684RTC-5F
EM42AM1684RTC-6FE
EM42AM1684RTC-5FE
Organization
16M X 16
16M X 16
16M X 16
16M X 16
Max. Freq
166MHz @CL2.5-3-3
200MHz @CL3-3-3
166MHz @CL2.5-3-3
200MHz @CL3-3-3
Package
66pin TSOP(ll)
66pin TSOP(ll)
66pin TSOP(II)
66pin TSOP(II)
Grade
Commercial
Commercial
Extended
Extended
Pb
Free
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Sep. 2010
2/21
www.eorex.com
EOREX [ EOREX CORPORATION ]
