欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM428M1684LBA-8FE 参数 Datasheet PDF下载

EM428M1684LBA-8FE图片预览
型号: EM428M1684LBA-8FE
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB ( 8M × 4Bank × 16 ),双倍数据速率SDRAM [512Mb (8M】4Bank】16) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 20 页 / 961 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第12页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第13页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第14页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第15页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第16页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第17页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第18页浏览型号EM428M1684LBA-8FE的Datasheet PDF文件第20页  
eorex  
Preliminary  
EM42BM1684LBB  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter  
on A6 and A5, driving capability of data output drivers is selected.  
Temperature Compensated Self-Refresh  
TCSR controlled by programming in the extended mode register (EMRS). The memory automatically  
changes the self-refresh cycle by temperature fluctuations.  
Partial Array Self Refresh  
In EMRS setting ,memory array size to be refreshed during self-refresh operation is programmable in order  
to reduce power. Data outside the defined area will not be retained during self-refresh.  
Jul. 2006  
www.eorex.com  
19/20  
 复制成功!