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EN29LV160AT-90TIP 参数 Datasheet PDF下载

EN29LV160AT-90TIP图片预览
型号: EN29LV160AT-90TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2048K X 8位/ 1024 KX 16位)闪存 [16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 43 页 / 410 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV160A  
COMMAND DEFINITIONS  
The operations of the EN29LV160A are selected by one or more commands written into the  
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,  
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data  
sequences written at specific addresses via the command register. The sequences for the  
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,  
incorrect data values or improper sequences will reset the device to Read Mode.  
Table 9. EN29LV160A Command Definitions  
Bus Cycles  
1st  
2nd  
Write Cycle  
Data  
3rd  
Write Cycle  
4th  
Write Cycle  
Data  
5th  
6th  
Write Cycle  
Data Add Data  
Command  
Sequence  
Write Cycle  
Write Cycle  
Add  
Data Add  
Add  
Data Add  
Add  
Read  
Reset  
1
1
RA  
xxx  
RD  
F0  
000  
7F  
1C  
7F  
1C  
22C4  
C4  
Word  
Byte  
555  
2AA  
55  
555  
555  
Manufacturer  
ID  
100  
000  
200  
x01  
x02  
4
AA  
90  
AAA  
AAA  
Device ID  
Top Boot  
Word  
Byte  
555  
AAA  
2AA  
55  
555  
AAA  
4
4
AA  
AA  
90  
90  
555  
Device ID  
Bottom Boot  
Word  
Byte  
555  
2AA  
555  
x01  
x02  
2249  
49  
55  
AAA  
555  
AAA  
2AA  
(SA) XX00  
X02  
(SA) 00  
Word  
Byte  
555  
555  
Sector Protect  
Verify  
XX01  
4
AA  
55  
90  
AAA  
555  
AAA  
X04  
01  
Word  
Byte  
Word  
Byte  
555  
AAA  
555  
2AA  
55  
555  
AAA  
555  
Program  
Unlock Bypass  
4
3
AA  
AA  
A0  
20  
PA  
PD  
555  
2AA  
55  
AAA  
555  
AAA  
Unlock Bypass Program  
Unlock Bypass Reset  
2
2
XXX A0  
XXX 90  
PA  
XXX 00  
PD  
Word  
555  
AAA  
555  
AAA  
2AA  
555  
2AA  
555  
555  
AAA  
555  
555  
AAA  
555  
2AA  
555  
2AA  
555  
555  
10  
Chip Erase  
6
6
AA  
55  
80  
80  
AA  
AA  
55  
55  
Byte  
Word  
Byte  
AAA  
Sector Erase  
AA  
55  
SA  
30  
AAA  
AAA  
Erase Suspend  
Erase Resume  
1
1
xxx  
xxx  
55  
B0  
30  
Word  
Byte  
CFI Query  
1
98  
AA  
Address and Data values indicated in hex  
RA = Read Address: address of the memory location to be read. This is a read cycle.  
RD = Read Data: data read from location RA during Read operation. This is a read cycle.  
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care  
PD = Program Data: data to be programmed at location PA  
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.  
Reading Array Data  
The device is automatically set to reading array data after power up. No commands are required to  
retrieve data. The device is also ready to read array data after completing an Embedded Program  
or Embedded Erase algorithm.  
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read  
array data using the standard read timings, with the only difference in that if it reads at an address  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
13  
Rev. C, Issue Date: 2005/01/07