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EN29LV320T-70TIP 参数 Datasheet PDF下载

EN29LV320T-70TIP图片预览
型号: EN29LV320T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4096K ×8位/ 2048K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 49 页 / 420 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV320  
Revisions List  
Revision No  
Description  
Date  
A
B
Initial Release  
2004/12/23  
2005/01/07  
Correct typo on page 47, dimension E and N corrected  
1. Correct WP#/ACC states in User Mode Table on page 10,  
2. Some notes for application added.  
3. Correct EN29LV320T/B typo in titles of Sector Group  
Organization table on page 14.  
1. change Vcc condition from 2.7V-3.6V to 3.0V-3.6V for 70ns  
read operation  
2. remove Icc3 standby current TTL input condition at Table 11  
1. Add tRPD parameter in the table on page 34  
2. Change the FBGA package dimension to enhance the BGA  
substrate and ball strength, the difference is  
2.1. Package Thickness A : 1.10 mm to 1.31 mm  
2.2. Ball size b : 0.3 mm to 0.4 mm  
C
D
2005/01/31  
2005/05/31  
2006/05/16  
E
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
49  
Rev. E, Issue Date: 2006/05/16  
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