EN29F002A / EN29F002AN
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
Speed Options
Description
JEDEC
Standard
-45
45
-55
55
-70
70
-90
90
Unit
ns
Min
Min
Min
Min
Min
Min
Write Cycle Time
tAVAV
tWC
0
35
20
0
0
45
25
0
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
Data Setup Time
tAVEL
tELAX
tDVEH
tEHDX
tAS
tAH
tDS
tDH
tOES
Data Hold Time
0
0
0
0
Output Enable Setup Time
0
0
0
0
0
ns
ns
Output Enable Read
tOEH
Hold Time
Toggle and
Data Polling
10
Min
10
10
10
10
Read Recovery Time before
Write (
0
0
0
0
ns
tGHEL
tGHEL
High to
Low)
CE
OE
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Min
Min
0
0
0
0
0
0
0
0
ns
ns
ns
ns
µs
µs
s
tWLEL
tEHWH
tELEH
tEHEL
tWHWH1 tWHWH1
tWHWH2 tWHWH2
tWHWH3 tWHWH3
tWS
tWH
tCP
SetupTime
Hold Time
W E
W E
25
20
7
30
20
7
35
20
7
45
20
7
Write Pulse Width
Write Pulse Width High
tCPH
Programming Operation
Sector Erase Operation
Chip Erase Operation
Vcc Setup Time
200
0.3
5
200
0.3
5
200
0.3
5
200
0.3
5
s
3
3
3
3
s
35
50
500
35
50
500
35
50
500
35
50
500
s
µs
ns
tVCS
tVIDR
Rise Time to V
ID
Min
500
500
500
500
ns
tRP
RESET Pulse Width
(n/a for EN29F002AN)
Min
4
4
4
4
µs
tRSP
Setup Time
RESET
(n/a for EN29F002AN)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
24
Rev. A, Issue Date: 2003/03/26
EON [ EON SILICON SOLUTION INC. ]
