EN29F002A / EN29F002AN
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
Symbol
Parameter
Input Leakage Current
Test Conditions
0V≤ V ≤ Vcc
Min
Max
±5
Unit
µA
I
LI
IN
Output Leakage Current
±5
µA
I
0V≤ V
≤ Vcc
OUT
LO
Supply Current (read) TTL Byte
30
mA
I
CE# = V ; OE# = V ;
IL IH
CC1
f = 6MHz
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
1.0
5.0
mA
µA
I
I
I
CE# = V
IH
RESET# = CE# = Vcc ± 0.2V
CC2
CC3
CC4
(1)
mA
CE# = V ; OE# = V
;
IH
IL
Supply Current (Program or Erase)
30
Byte program, Sector or Chip
Erase in progress
Input Low Voltage
-0.5
2
0.8
Vcc ± 0.5
0.45
V
V
V
V
V
V
V
IL
Input High Voltage
V
IH
Output Low Voltage
V
I
= 2 mA
OL
OL
OH
Output High Voltage TTL
Output High Voltage CMOS
2.4
Vcc - 0.4V
10.5
V
I
I
= -2.5 mA
= -100 µA
OH
OH
A9 Voltage (Electronic Signature)
and RESET# Voltage (Temporary
Sector Unprotect)
11.5
V
ID
A9 and RESET# Current (Electronic
Signature)
A9, RESET# = VID
100
4.2
µA
V
I
LIT
Supply voltage (Erase and
Program lock-out)
V
3.2
LKO
Notes:
(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
21
Rev. A, Issue Date: 2003/03/26
EON [ EON SILICON SOLUTION INC. ]
