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EN25S10 参数 Datasheet PDF下载

EN25S10图片预览
型号: EN25S10
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位1.8V串行闪存与4K字节扇区制服 [1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 530 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S10  
MEMORY ORGANIZATION  
The memory is organized as:  
z
z
131,072 bytes  
Uniform Sector Architecture  
4 blocks of 32-Kbyte  
32 sectors of 4-Kbyte  
512 pages (256 bytes each)  
z
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,  
Block or Chip Erasable but not Page Erasable.  
Table 2. Uniform Block Sector Architecture  
Block  
Sector  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
Address range  
01F000h  
01E000h  
01D000h  
01C000h  
01B000h  
01A000h  
019000h  
018000h  
017000h  
016000h  
015000h  
014000h  
013000h  
012000h  
011000h  
010000h  
00F000h  
00E000h  
00D000h  
00C000h  
00B000h  
00A000h  
009000h  
008000h  
007000h  
006000h  
005000h  
004000h  
003000h  
002000h  
001000h  
000000h  
01FFFFh  
01EFFFh  
01DFFFh  
01CFFFh  
01BFFFh  
01AFFFh  
019FFFh  
018FFFh  
017FFFh  
016FFFh  
015FFFh  
014FFFh  
013FFFh  
012FFFh  
011FFFh  
010FFFh  
00FFFFh  
00EFFFh  
00DFFFh  
00CFFFh  
00BFFFh  
00AFFFh  
009FFFh  
008FFFh  
007FFFh  
006FFFh  
005FFFh  
004FFFh  
003FFFh  
002FFFh  
001FFFh  
000FFFh  
3
2
1
0
8
7
6
5
4
3
2
1
0
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
5
Rev. F, Issue Date: 2011/11/07