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EN25P05-100GCP 参数 Datasheet PDF下载

EN25P05-100GCP图片预览
型号: EN25P05-100GCP
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的统一部门,串行闪存 [512 Kbit Uniform Sector, Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 30 页 / 377 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25P05  
EN25P05  
512 Kbit Uniform Sector, Serial Flash Memory  
FEATURES  
- Write Protect all or portion of memory via  
software  
- Enable/Disable protection with WP# pin  
Single power supply operation  
- Full voltage range: 2.7-3.6 volt  
512 Kbit Serial Flash  
- 512 K-bit/64 K-byte/256 pages  
- 256 bytes per programmable page  
High performance program/erase speed  
- Byte program time: 8µs typical  
- Page program time: 1.5ms typical  
- Sector erase time: 500ms typical  
- Chip erase time: 1 Seconds typical  
High performance  
- 75MHz clock rate  
Low power consumption  
Minimum 100K endurance cycle  
- 5 mA typical active current  
- 1 μA typical power down current  
Package Options  
- 8 pins SOP 150mil body width  
- 8 contact VDFN  
- All Pb-free packages are RoHS compliant  
Uniform Sector Architecture:  
- Two 32-Kbyte sectors  
Commercial and industrial temperature  
Range  
Software and Hardware Write Protection:  
GENERAL DESCRIPTION  
The EN25P05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to  
256 bytes at a time, using the Page Program instruction.  
The EN25P05 is designed to allow either single Sector at a time or full chip erase operation. The  
EN25P05 can be configured to protect part of the memory as the software protected mode. The  
device can sustain a minimum of 100K program/erase cycles on each sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. B, Issue Date: 2006/12/27