EN25LF10
Revisions List
Revision No Description
Date
A
B
C
Initial release
2008/05/12
2008/06/23
2008/12/18
Remove C grade option of temperature range in page 1 and page 29
1. Add Eon products’ New top marking “cFeon“ information in page 1.
2. Add the description “Serial Interface Architecture “and modify active
current (typical) from 5mA to 12mA in page 2.
3. List the Note 4 for 90h command in Table 4 in page 10.
4. Update Table 6. Status Register Bit Locations in page 11.
5. Add Table 7. OTP Sector Address in page 22.
6. Add Note “ Vcc (max) is 3.6V and Vcc (min) is 2.7V “ in Table 8 in
page 23.
7. Modify I
from "Q = open" to " DQ = open " in Table 9 in page 24
CC3
8. Correct the typo “tCLH to tCH” 、 “tCLL to tCL”、”tHHQZ to tHHQX”
in Table 11 in page 25.
9. Modify Storage Temperature from "-65 to + 125" to "-65 to +150"
in page 27
10. Delete Latch up Characteristics Table from version C.
11. Modify Figure 27. VDFN8 ( 5x6mm ) dimension A from 0.80 to 0.75
in page 30.
D
E
Modify D2 of VDFN8(5x6) from 4.23 to 3.40 on page 30.
Correct the typo of Note 2 on page 23.”VCC (max.) is 3.6V and VCC
(min.) is 2.35V”
2010/05/25
2011/05/19
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
32
Rev. E, Issue Date: 2011/05/19
EON [ EON SILICON SOLUTION INC. ]
