EN25LF10
Power-up Timing
Figure 21. Power-up Timing
Table 8. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
10
1
Max.
Unit
µs
(1)
t
VCC(min) to CS# low
VSL
(1)
t
Time delay to Write instruction
Write Inhibit Voltage
10
ms
V
PUW
(1)
1
2.2
VWI
Note:
1.The parameters are characterized only.
2. VCC (max.) is 3.6V and VCC (min.) is 2.35V
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).
The Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
23
Rev. E, Issue Date: 2011/05/19
EON [ EON SILICON SOLUTION INC. ]
