EN25LF10
EN25LF10
1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
• Software and Hardware Write Protection:
• Single power supply operation
- Write Protect all or portion of memory via
- Full voltage range: 2.35-3.6 volt
software
• Serial Interface Architecture
- Enable/Disable protection with WP# pin
- SPI Compatible: Mode 0 and Mode 3
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
• 1 Mbit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
- Chip erase time: 2 Seconds typical
• High performance
- 75MHz clock rate
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Low power consumption
- 12 mA typical active current
- 1 μA typical power down current
• Package Options
- 8 pins SOP 150mil body width
• Uniform Sector Architecture:
- 32 sectors of 4-Kbyte
- 4 blocks of 32-Kbyte
- Any sector or block can be
erased individually
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25LF10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25LF10 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25LF10 can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
2
Rev. E, Issue Date: 2011/05/19
EON [ EON SILICON SOLUTION INC. ]
