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EN25LF10_11 参数 Datasheet PDF下载

EN25LF10_11图片预览
型号: EN25LF10_11
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位串行闪存与4KB的扇区制服 [1 Megabit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 32 页 / 549 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25LF10  
Figure 6. Write Disable Instruction Sequence Diagram  
Read Status Register (RDSR) (05h)  
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status  
Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in  
progress. When one of these cycles is in progress, it is recommended to check the Write In Progress  
(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register  
continuously, as shown in Figure 7.  
Figure 7. Read Status Register Instruction Sequence Diagram  
Table 6. Status Register Bit Locations  
S7  
S6  
S5  
S4  
S3  
S2  
S1  
S0  
OTP_LOCK  
SRP  
Status Register  
Protect  
BP2  
BP1  
BP0  
WEL  
WIP  
bit  
(note 1)  
(Block Protected (Block Protected (Block Protected (Write Enable  
(Write In  
bits)  
bits)  
bits)  
Latch)  
Progress bit)  
Reserved Reserved  
bits bits  
1 = write  
enable  
0 = not write 0 = not in write  
1 = write  
operation  
1 = status  
register write  
disable  
1 = OTP  
sector is  
protected  
(note 2)  
(note 2)  
(note 2)  
enable  
operation  
Non-volatile bit  
Non-volatile bit Non-volatile bit Non-volatile bit  
volatile bit  
volatile bit  
Note  
1. In OTP mode, SRP bit is served as OTP_LOCK bit.  
2. See the table “Protected Area Sizes Sector Organization”.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
11  
Rev. E, Issue Date: 2011/05/19