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EN25F05-75VIP 参数 Datasheet PDF下载

EN25F05-75VIP图片预览
型号: EN25F05-75VIP
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的串行闪存与4KB的部门统一 [512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 31 页 / 422 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25F05  
Figure 3. SPI Modes  
Page Programming  
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte,  
and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the  
internal Program cycle (of duration t ).  
PP  
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be pro-  
grammed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on  
the same page of memory.  
Sector Erase, Block Erase and Chip Erase  
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied,  
the bytes of memory need to have been erased to all 1s (FFh). This can be achieved a sector at a  
time, using the Sector Erase (SE) instruction, a block at a time using the Block Erase (BE)  
instruction or throughout the entire memory, using the Chip Erase (CE) instruction. This starts an  
internal Erase cycle (of duration t  
t
or t ). The Erase instruction must be preceded by a Write  
SE BE  
CE  
Enable (WREN) instruction.  
Polling During a Write, Program or Erase Cycle  
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE  
or CE ) can be achieved by not waiting for the worst case delay (t , t , t , t  
or t ). The  
W PP SE BE  
CE  
Write In Progress (WIP) bit is provided in the Status Register so that the application program can  
monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle  
is complete.  
Active Power, Stand-by Power and Deep Power-Down Modes  
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip  
Select (CS#) is High, the device is disabled, but could remain in the Active Power mode until all  
internal cycles have completed (Program, Erase, Write Status Register). The device then goes into  
the Stand-by Power mode. The device consumption drops to ICC1  
.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down  
Mode (DP) instruction) is executed. The device consumption drops further to ICC2. The device re-  
mains in this mode until another specific instruction (the Release from Deep Power-down Mode and  
Read Device ID (RDI) instruction) is executed.  
All other instructions are ignored while the device is in the Deep Power-down mode. This can be  
used as an extra software protection mechanism, when the device is not in active use, to protect the  
device from inadvertent Write, Program or Erase instructions.  
Status Register. The Status Register contains a number of status and control bits that can be read  
or set (as appropriate) by specific instructions.  
WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status  
Register, Program or Erase cycle.  
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
5
Rev. B, Issue Date: 2008/06/23  
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