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EN25D16-100HI 参数 Datasheet PDF下载

EN25D16-100HI图片预览
型号: EN25D16-100HI
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存 [16 Megabit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 37 页 / 483 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25D16  
MEMORY ORGANIZATION  
The memory is organized as:  
z
z
2,097,152 bytes  
Uniform Sector Architecture  
32 blocks of 64-Kbyte  
512 sectors of 4-Kbyte  
8192 pages (256 bytes each)  
z
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,  
Block or Chip Erasable but not Page Erasable.  
Table 2. Uniform Block Sector Architecture  
Block  
31  
Sector  
511  
Address range  
1FF000  
1FFFFF  
496  
495  
1F0000  
1EF000  
1F0FFF  
1EFFFF  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
480  
479  
1E0000  
1DF000  
1E0FFF  
1DFFFF  
464  
463  
1D0000  
1CF000  
1D0FFF  
1CFFFF  
448  
447  
1C0000  
1BF000  
1C0FFF  
1BFFFF  
432  
431  
1B0000  
1AF000  
1B0FFF  
1AFFFF  
416  
415  
200000  
19F000  
200FFF  
19FFFF  
400  
399  
190000  
18F000  
190FFF  
18FFFF  
384  
383  
180000  
17F000  
180FFF  
17FFFF  
368  
367  
170000  
16F000  
170FFF  
16FFFF  
352  
351  
160000  
15F000  
160FFF  
15FFFF  
336  
335  
150000  
14F000  
150FFF  
14FFFF  
320  
319  
140000  
13F000  
140FFF  
13FFFF  
304  
303  
130000  
12F000  
130FFF  
12FFFF  
288  
287  
120000  
11F000  
120FFF  
11FFFF  
272  
271  
110000  
10F000  
110FFF  
10FFFF  
256  
100000  
100FFF  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
5
Rev. B, Issue Date: 2008/06/23  
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