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EN25B40-75HI 参数 Datasheet PDF下载

EN25B40-75HI图片预览
型号: EN25B40-75HI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与引导和参数部门 [4 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存存储
文件页数/大小: 36 页 / 462 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B40  
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable  
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and  
Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction  
code, and then driving Chip Select (CS#) High.  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to  
a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting the instruction code  
“04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL bit is automatically reset  
after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, and Bulk  
Erase instructions.  
Read Status Register (RDSR) (05h)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
11  
Rev. E, Issue Date: 2007/5/3  
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