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EN25B10-75VC 参数 Datasheet PDF下载

EN25B10-75VC图片预览
型号: EN25B10-75VC
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位串行闪存与引导和参数部门 [1 Mbit Serial Flash Memory with Boot and Parameter Sectors]
分类和应用: 闪存
文件页数/大小: 31 页 / 386 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25B10  
MEMORY ORGANIZATION  
The memory is organized as:  
z
131,072 bytes  
z
Flexible Sector Architecture  
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors  
Bottom or top boot configurations  
512 pages (256 bytes each)  
z
z
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or  
Bulk Erasable but not Page Erasable.  
Table 2a. Bottom Boot Block Sector Architecture  
Sector  
SECTOR SIZE (KByte)  
Address range  
18000h – 1FFFFh  
10000h – 17FFFh  
08000h – 0FFFFh  
04000h – 07FFFh  
02000h – 03FFFh  
01000h – 01FFFh  
00000h – 00FFFh  
6
32  
32  
32  
16  
8
5
4
3
2
1
0
4
4
Table 2b. Top Boot Block Sector Architecture (Special order)  
Sector  
SECTOR SIZE (KByte)  
Address range  
1F000h – 1FFFFh  
1E000h – 1EFFFh  
1C000h – 1DFFFh  
18000h – 1BFFFh  
10000h – 17FFFh  
08000h – 0FFFFh  
00000h – 07FFFh  
6
4
4
5
4
3
2
1
0
8
16  
32  
32  
32  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
4
Rev. B, Issue Date: 2006/12/26