EN25B10
Revisions List
Revision No Description
Date
Initial release
A
B
2006/04/27
2006/12/26
1.
Change clock rate from 50MHz to 75MHz,
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 100 to 500 ms typical to 300 to 500 ms
in page 1
2. Change Table 8 DC Characteristics in page 22
(1) Add I
for 75MHz
CC3
3. Change Table 10 to 75MHz AC Characteristics in page 23
(1) Change FR from 50 to 75MHz
(2) Change fR from 33 to 50MHz
(3) Change tCLH from 9ns to 6ns
(4) Change tCLL from 9ns to 6ns
(5) Change tSHQZ from 9ns to 6ns
(6) Change tHLQZ from 9ns to 6ns
(7) Change tHHQZ from 9ns to 6ns
(8) Change tCLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10) Change 16KB Sector erase time 0.2 / 0.4 seconds to
0.5 / 1 seconds for typical and maximum
(11) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
4. Add Table 11: 50MHz AC Characteristics in page 24
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change 16KB Sector erase time 0.2 / 0.4 seconds to
0.5 / 1 seconds for typical and maximum
(3) Change 4KB Sector erase time 0.15 / 0.3 seconds to
0.3 / 0.6 seconds for typical and maximum
5. Add 75MHz option in Ordering Information in page 30
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
31
Rev. B, Issue Date: 2006/12/26
EON [ EON SILICON SOLUTION INC. ]
