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EM4350A6WW11E 参数 Datasheet PDF下载

EM4350A6WW11E图片预览
型号: EM4350A6WW11E
PDF下载: 下载PDF文件 查看货源
内容描述: 1千位读/写非接触式识别装置 [1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE]
分类和应用: 装置
文件页数/大小: 14 页 / 551 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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R
EM4150  
EM4350  
Electrical Characteristics  
VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated  
Parameter  
Symbol Test Conditions  
Min  
2.0  
2.6  
Typ  
Max  
Units  
Supply voltage  
VDD  
5.5  
V
V
Minimum EEPROM write  
voltage  
VDDee  
Power Check EEPROM write  
Supply current / read  
IPWcheck  
Ird  
VDD = 3V  
80  
5.0  
µA  
µA  
Read Mode  
3.0  
40  
Suppy current / write  
Iwr  
Write mode (VDD = 3V)  
70  
µA  
Modulator ON voltage drop  
VON  
0.50  
2.50  
173.5  
2.6  
V
V(COIL1–Vss) and V(COIL2-Vss) Icoil = 100µA  
V(COIL1–Vss) and V(COIL2-Vss) Icoil = 5mA  
V
Resonance Capacitor  
Cr  
Vprh  
166.5  
1.0  
170  
2.0  
pF  
Power On Reset level high  
Clock extractor input min.  
Clock extractor input max.  
EEPROM data endurance  
EEPROM retention  
Rising Supply  
V
Vclkmin  
Vclkmax  
Ncy  
Minimum voltage for Clock Extraction  
Maximum voltage to detect modulation stop  
Erase all / Write all at VDD = 5V  
Top = 55°C after 100'000 cycles (Note 1)  
Vpp  
mVpp  
cycles  
years  
50  
100'000  
10  
Tret  
Note 1: Based on 1000 hours at 150°C  
Timing Characteristics  
VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated  
All timings are derived from the field frequency and are specified as a number of RF periods.  
Parameters  
Symbol  
Test conditions  
Value  
Units  
Option : 64 clocks per bit  
Opt64  
Read Bit Period  
trdb  
tpatt  
trdw  
tpp  
twa  
tinit  
64  
320  
3200  
64  
64  
2112  
3200  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
LIW/ACK/NACK pattern Duration  
Read 1 Word Duration  
Processing Pause Time  
Write Access Time  
Initialization Time  
EEPROM write time  
including LIW  
VDD = 3 V  
twee  
Option : 32 clocks per bit  
Opt32  
Read Bit Period  
trdb  
tpatt  
trdw  
tpp  
twa  
tinit  
32  
160  
1600  
32  
32  
1056  
2624  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
RF periods  
LIW/ACK/NACK pattern Duration  
Read 1 Word Duration  
Processing Pause Time  
Write Access Time  
Initialization Time  
EEPROM write time  
including LIW  
VDD = 3 V  
twee  
RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used :  
The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms.  
The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms.  
ATTENTION  
Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close  
to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be  
taken into account when developing reader software.  
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Copyright © 2004, EM Microelectronic-Marin SA  
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