欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM4170A5WW11 参数 Datasheet PDF下载

EM4170A5WW11图片预览
型号: EM4170A5WW11
PDF下载: 下载PDF文件 查看货源
内容描述: 125kHz的CRYPTO读/写非接触式识别装置 [125kHz CRYPTO READ/WRITE Contactless Identification Device]
分类和应用: 装置
文件页数/大小: 13 页 / 144 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
 浏览型号EM4170A5WW11的Datasheet PDF文件第1页浏览型号EM4170A5WW11的Datasheet PDF文件第2页浏览型号EM4170A5WW11的Datasheet PDF文件第4页浏览型号EM4170A5WW11的Datasheet PDF文件第5页浏览型号EM4170A5WW11的Datasheet PDF文件第6页浏览型号EM4170A5WW11的Datasheet PDF文件第7页浏览型号EM4170A5WW11的Datasheet PDF文件第8页浏览型号EM4170A5WW11的Datasheet PDF文件第9页  
EM4170
Absolute Maximun Ratings
Parameter
Symbol
Supply Voltage
V
POS-REG
(Unregulated)
Min.
-0.3
Max.
9.5
Units
V
Operating Conditions
Parameter
Symbol Min.
Operating
T
OP
-40
Temperature
Typ.
+25
Max. Units
+85
°C
Supply Voltage
(regulated)
Voltage at remaining
pins Excepted COIL1,
COIL2
Storage temperature
Electrostatic discharge
(Mil-STD-883 C method
3015)
Maximum Current
induced on COIL1 and
COIL2
V
DD
V
PIN
T
store
V
ESD
-0.3
5.5
V
V
°C
V
Maximum coil
current
Frequency on
Coil inputs
I
COIL
F
COIL
-10
100
125
+10
150
mA
kHz
V
SS
- 0.3 V
DD
+ 0.3
-55
1000
+ 125
I
COIL
-30
+ 30
mA
Handling Procedure
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
electrical characteristics may affect device reliability
Electrical parameters and functionality are not guaranteed
when the circuit is exposed to light.
This device has built-in protection against high static
voltages or electric fields; however, anti-static
precautions should be taken as for any other CMOS
component. Unless otherwise specified, proper
operation can only occur when all terminal voltages are
kept within the supply voltage range.
Electrical Characteristics
V
DD
= V
POS
_
REG
= 2.5V, V
SS
= 0V, f
coil
= 125 kHz Sine wave, V
coil
= 1V
pp,
T
op
= 25°C unless otherwise specified.
Parameter
Supply Voltage(unregulated)
Supply Voltage (regulated)
EEPROM read voltage
Symbol
V
POS-REG
V
DD
V
RD
Conditions
V
POS_REG
= max (note 1)
Read Mode
(note 2)
Min.
Typ.
Max.
1)
4.2
Units
V
V
V
2.8
2.0
2.5
3.5
EEPROM write voltage
Supply current / read
Supply current /write @25°C
Supply current / write
Modulator voltage drop
V
EE
I
rd
I
wr25
I
wr
V
ON
Read Mode V
DD
=2.0V
Write Mode, V
DD
=2.5V
Write Mode, V
DD
=2.6V
-40°C<T<85°C
V
Coil1
- V
SS
and V
Coil2
- V
SS
I
coil
= 100µA
V
Coil1
- V
SS
and V
Coil2
- V
SS
I
coil
= 5mA
10 kHz, 100 mV
pp
-40°C to 85°C
Rising Supply
Falling Supply
Min for clock extraction
Max for clock extraction
Erase all / Write all
V
5.0
30
38
70
µA
µA
µA
V
V
pF
ppm/K
%
V
V
V
pp
50
mV
pp
cycles
years
0.30
0.45
0.60
2.50
Resonnance Capacitor
Capacitor temp. coeff
Capacitor tolerance/wafer
POR level high
POR level low
Clock extractor input min
Clock extractor input max
EEPROM data endurance
EEPROM retention
C
r
TKC
r
TOLC
r
V
prh
V
prl
V
clkmin
V
clkmax
N
cy
T
ret
170
-75
-2
200
230
+75
+2
2.4
2.2
2.0
1.8
0.6
100000
10
0.36
Top = 55°C after 100'000 cycles
(note 3)
Note 1 : Maximum voltage is defined by forcing 10mA on Coil1-Coil2
Note 2 : The circuit is not functional below the POR-level
Note 3 : Based on 1000 hours at 150°C
Copyright
2002, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com