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EM4170A5CI2LB 参数 Datasheet PDF下载

EM4170A5CI2LB图片预览
型号: EM4170A5CI2LB
PDF下载: 下载PDF文件 查看货源
内容描述: 125kHz的CRYPTO读/写非接触式识别装置 [125kHz CRYPTO READ/WRITE Contactless Identification Device]
分类和应用: 装置
文件页数/大小: 13 页 / 144 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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EM4170  
Absolute Maximun Ratings  
Operating Conditions  
Parameter  
Symbol  
VPOS-REG  
Min.  
Max.  
Units  
Parameter  
Symbol Min. Typ. Max. Units  
Supply Voltage  
(Unregulated)  
-0.3  
9.5  
V
Operating  
TOP  
-40  
+25 +85  
+10  
°C  
Temperature  
Supply Voltage  
(regulated)  
VDD  
-0.3  
5.5  
V
V
Maximum coil  
current  
ICOIL  
-10  
mA  
Voltage at remaining  
pins Excepted COIL1,  
COIL2  
VPIN  
VSS - 0.3 VDD + 0.3  
Frequency on  
Coil inputs  
FCOIL  
100  
125  
150  
kHz  
Storage temperature  
Tstore  
VESD  
-55  
+ 125  
°C  
V
Electrostatic discharge  
(Mil-STD-883 C method  
3015)  
1000  
Maximum Current  
induced on COIL1 and  
COIL2  
ICOIL  
-30  
+ 30  
mA  
This device has built-in protection against high static  
voltages or electric fields; however, anti-static  
precautions should be taken as for any other CMOS  
component. Unless otherwise specified, proper  
operation can only occur when all terminal voltages are  
kept within the supply voltage range.  
Handling Procedure  
Stresses above these listed maximum ratings may cause  
permanent damage to the device. Exposure beyond specified  
electrical characteristics may affect device reliability  
Electrical parameters and functionality are not guaranteed  
when the circuit is exposed to light.  
Electrical Characteristics  
VDD = VPOS_REG = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise specified.  
Parameter  
Symbol Conditions  
Min.  
Typ.  
Max.  
Units  
Supply Voltage(unregulated)  
Supply Voltage (regulated)  
EEPROM read voltage  
EEPROM write voltage  
Supply current / read  
Supply current /write @25°C  
Supply current / write  
VPOS-REG VPOS_REG = max (note 1)  
1)  
V
V
V
VDD  
VRD  
Read Mode  
(note 2)  
2.8  
2.0  
2.5  
3.5  
4.2  
VEE  
Ird  
Iwr25  
Iwr  
V
Read Mode VDD =2.0V  
Write Mode, VDD =2.5V  
5.0  
38  
70  
µA  
µA  
µA  
30  
Write Mode, VDD =2.6V  
-40°C<T<85°C  
Modulator voltage drop  
VON  
VCoil1 - VSS and VCoil2 - VSS  
0.30  
170  
0.45  
0.60  
2.50  
V
V
Icoil = 100µA  
VCoil1 - VSS and VCoil2 - VSS  
Icoil = 5mA  
Resonnance Capacitor  
Cr  
10 kHz, 100 mVpp  
-40°C to 85°C  
200  
230  
pF  
Capacitor temp. coeff  
TKCr  
-75  
-2  
+75  
ppm/K  
Capacitor tolerance/wafer  
TOLCr  
+2  
%
POR level high  
POR level low  
Vprh  
Vprl  
Rising Supply  
Falling Supply  
2.0  
1.8  
2.4  
2.2  
V
V
Clock extractor input min  
Clock extractor input max  
EEPROM data endurance  
EEPROM retention  
Vclkmin  
Vclkmax  
Ncy  
Min for clock extraction  
Max for clock extraction  
Erase all / Write all  
0.6  
0.36  
Vpp  
50  
mVpp  
cycles  
years  
100000  
10  
Tret  
Top = 55°C after 100'000 cycles  
(note 3)  
Note 1 : Maximum voltage is defined by forcing 10mA on Coil1-Coil2  
Note 2 : The circuit is not functional below the POR-level  
Note 3 : Based on 1000 hours at 150°C  
3
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Copyright 2002, EM Microelectronic-Marin SA  
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