EM4022
Absolute Maximum Ratings
Parameter
Maximum AC peak current
induced on COIL1 and
COIL2
Maximum DC voltage
induced between M and V
SS
Maximum DC current
supplied into M
Power supply
Max. voltage other pads
Min. voltage other pads
Storage temperature
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
note1) whatever is reached first
Handling Procedures
Conditions
± 30 mA
Symbol
I
COIL
V
M
(note1)
5V
60 mA
-0.3 to V
M
V
DD
+ 0.3 V
V
SS
- 0.3 V
o
-55 to +125 C
1000 V
I
M
(note1)
This device has built-in protection against high static
voltages or electric fields; however, due to the unique
properties of this device, anti-static precautions should
be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur
when all the terminal voltages are kept within the supply
voltage range.
V
DD
- V
SS
V
max
V
max
T
STORE
V
ESD
Operating Conditions
Parameter
Operating temperature
Maximum coil current
AC voltage on coil*
DC voltage on M*
Symbol
Min Typ
-40
T
A
-10
I
COIL
V
COIL
3.5
V
M
Max Units
o
+85 C
10
mA
15
V
pp
V
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device
reliability or cause malfunction.
* The AC voltage on the coil and the DC voltage at pad
M are limited by the on-chip shunt regulator loaded at
I
COIL
in table 3
Electrical Characteristics
O
V
SUPPLY
between 2.0 V and 3.0 V, T
A
= 25 C, unless otherwise specified.
Parameter
Supply voltage (V
DD
- V
SS
)
Regulated voltage
Oscillator frequency
Power-on reset threshold
Power-on reset threshold
Power-on reset hysteresis
GAP input time constant
Symbol
V
SUPPLY
V
M
F
OSC
V
PONR
V
PONF
V
PHYS
T
GAP
Test conditions
I
M
= 50 mA
V
SUPPLY
= 3 V
V
SUPPLY
rising
V
SUPPLY
falling
Extrapolated with an external
capacitor of 64nF
V
SUPPLY
= 3 V
f = 100KHz, 100mVpp
f = 100KHz, 100mVpp
V
SUPPLY
= 2 V
V
SUPPLY
= 2V
V
GAP
= 0V, V
SUPPLY
= 2V
f
OSC
= 128KHz, V
SUPPLY
= 2V
Min
V
PONR
+100mV
3.3
92
0.9
0.7
80
Typ
4
125
1.4
1.2
160
0.4
4
110
140
9
200
5
5
Max Units
V
M
V
4.7
V
160 kHz
1.8
V
1.6
V
240
mV
µ
s
Modulation transistor ON resistance
Resonance capacitor
Supply capacitor
Current consumption in modulation state
Shunt Regulator current consumption
Gap pull-up current consumption
Dynamic current consumption
R
ON
C
R
C
SUP
I
MOD
I
SHUNT
I
GAP
I
DYN
106.7
6
1.8
3.5
8
113.3
13
500
7
6.5
pF
pF
µ
A
nA
µ
A
µ
A
Ω
Timing Characteristics
1) All timings are derived from the on-chip oscillator.
2) The minimum
low frequency
GAP width for a single chip is 1 bit at its own clock frequency. The reader must however
allow for the spread in clock frequencies possible in a group of tags. Therefore the minimum width of the GAP in MUTE
and WAKE-UP signals must be 1.5 bits. High frequency GAPs can be arbitrarily.
3) The maximum GAP width for a single chip is 6 bits at its own clock frequency. The reader must however allow for the
spread in clock frequencies possible in a group of tags. Therefore the maximum width of the GAP in MUTE and WAKE-UP
signals must be 5 bits.
Parameter
High frequency GAP width
High frequency ACK GAP width
High frequency MUTE and WAKE-UP GAP width
Low frequency ACK GAP width
Low frequency MUTE and WAKE-UP GAP width
GAP separation in WAKE-UP signal
Symbol Test conditions
T
HFGAP
W
HFACK
W
HFMUTE
W
LFGAP
W
LFACK
W
LFMUTE
Min
50
Typ
Max Units
ns
6
bit
5
bit
6
bit
5
bit
5
bit
1.0
1.5
1.5
2
2
2
Copyright
2002, EM Microelectronic-Marin SA
3
www.emmicroelectronic.com
EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
