EM4022
This device has built-in protection against high static
voltages or electric fields; however, due to the unique
properties of this device, anti-static precautions should
be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur
when all the terminal voltages are kept within the supply
voltage range.
Absolute Maximum Ratings
Handling Procedures
Parameter
Symbol
Conditions
Maximum AC peak current
induced on COIL1 and
COIL2
± 30 mA
I COIL
Maximum DC voltage
induced between M and VSS
Maximum DC current
supplied into M
5 V
VM
(note1)
IM
60 mA
(note1)
Operating Conditions
Power supply
V
V
V
T
- VSS -0.3 to VM
VDD + 0.3 V
DD
Parameter
Symbol Min Typ Max Units
Max. voltage other pads
Min. voltage other pads
Storage temperature
max
max
STORE
V
Operating temperature
Maximum coil current
AC voltage on coil*
DC voltage on M*
-40
-10
+85 oC
TA
VSS - 0.3 V
-55 to +125oC
10
15
mA
ICOIL
VCOIL
VM
Vpp
Electrostatic discharge
maximum to MIL-STD-883C
method 3015
1000 V
ESD
3.5
V
note1) whatever is reached first
* The AC voltage on the coil and the DC voltage at pad
M are limited by the on-chip shunt regulator loaded at
ICOIL in table 3
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device
reliability or cause malfunction.
Electrical Characteristics
V
SUPPLY between 2.0 V and 3.0 V, TA = 25 OC, unless otherwise specified.
Parameter
Symbol Test conditions
Min
Typ Max Units
VPONR +100mV
VM
V
V
Supply voltage (VDD - VSS
)
VSUPPLY
Regulated voltage
VM
IM = 50 mA
3.3
92
0.9
0.7
80
4
4.7
Oscillator frequency
125 160 kHz
FOSC
VPONR
VPONF
VPHYS
TGAP
VSUPPLY = 3 V
VSUPPLY rising
VSUPPLY falling
Power-on reset threshold
Power-on reset threshold
1.4
1.2
160 240
0.4
1.8
1.6
V
V
Power-on reset hysteresis
GAP input time constant
mV
µs
Extrapolated with an external
capacitor of 64nF
Modulation transistor ON resistance
4
8
RON
CR
VSUPPLY = 3 V
Ω
Resonance capacitor
f = 100KHz, 100mVpp
f = 100KHz, 100mVpp
VSUPPLY = 2 V
106.7
6
110 113.3 pF
Supply capacitor
CSUP
IMOD
ISHUNT
IGAP
IDYN
140
9
pF
µA
nA
µA
µA
Current consumption in modulation state
Shunt Regulator current consumption
Gap pull-up current consumption
Dynamic current consumption
13
200 500
VSUPPLY = 2V
1.8
3.5
5
5
7
6.5
VGAP = 0V, VSUPPLY = 2V
fOSC = 128KHz, VSUPPLY = 2V
Timing Characteristics
1) All timings are derived from the on-chip oscillator.
2) The minimum low frequency GAP width for a single chip is 1 bit at its own clock frequency. The reader must however
allow for the spread in clock frequencies possible in a group of tags. Therefore the minimum width of the GAP in MUTE
and WAKE-UP signals must be 1.5 bits. High frequency GAPs can be arbitrarily.
3) The maximum GAP width for a single chip is 6 bits at its own clock frequency. The reader must however allow for the
spread in clock frequencies possible in a group of tags. Therefore the maximum width of the GAP in MUTE and WAKE-UP
signals must be 5 bits.
Parameter
Symbol Test conditions
THFGAP
Min Typ Max Units
High frequency GAP width
50
ns
bit
bit
bit
bit
bit
High frequency ACK GAP width
High frequency MUTE and WAKE-UP GAP width
Low frequency ACK GAP width
Low frequency MUTE and WAKE-UP GAP width
GAP separation in WAKE-UP signal
6
5
6
5
5
WHFACK
WHFMUTE
1.0
1.5
1.5
2
2
2
WLFGAP
WLFACK
WLFMUTE
3
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