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EM3027SDXSO8B 参数 Datasheet PDF下载

EM3027SDXSO8B图片预览
型号: EM3027SDXSO8B
PDF下载: 下载PDF文件 查看货源
内容描述: 实时时钟,带有I2C或SPI ,晶体温度补偿,电池切换和涓流充电器 [Real Time Clock with I2C or SPI, Crystal Temperature Compensation, Battery Switchover and Trickle Charger]
分类和应用: 晶体电池温度补偿时钟
文件页数/大小: 28 页 / 1086 K
品牌: EMMICRO [ EM MICROELECTRONIC - MARIN SA ]
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EM3027  
2.2  
Operating Conditions  
2
Absolute Maximum Ratings  
Parameter  
Symbol  
Min  
Typ  
Max Unit  
Parameter  
Symbol Conditions  
VCCmax  
VCCmin  
TA  
Operating Temp.  
Supply voltage  
(Note 1)  
-40  
+125 °C  
Maximum voltage at VCC  
Minimum voltage at VCC  
Maximum voltage at any  
signal pin  
Minimum voltage at any signal  
pin  
VSS + 6.0V  
VSS 0.3V  
VCC  
,
1.4  
5.0  
5.5  
V
VBack  
Vmax  
Vmin  
VCC + 0.3V  
Capacitor at VCC  
,
CD  
100  
nF  
VBack  
VSS 0.3V  
Table 4  
Note 1: Refer to paragraphs 9.1 and 9.2  
Maximum storage  
temperature  
TSTOmax  
TSTOmin  
+150°C  
-65°C  
Minimum storage temperature  
Electrostatic discharge  
maximum to MIL-STD-883C  
method 3015.7 with ref. to VSS  
Table 3  
2.3  
Parameter  
Frequency  
Crystal characteristics  
Symbol  
Min  
Typ  
32.768  
8.2  
Max Unit  
kHz  
VSmax  
2000V  
f
Load capacitance  
Series resistance  
CL  
RS  
7
12.5 pF  
70  
110  
k  
Stresses above these listed maximum ratings may cause  
permanent damages to the device.  
Table 5  
Crystal Reference : Micro Crystal CC5V-T1A  
web: www.microcrystal.com  
Exposure beyond specified operating conditions may  
affect device reliability or cause malfunction.  
2.4  
EEPROM Characteristics  
Parameter  
Symbol  
Min Typ  
Max  
Unit  
2.1  
Handling Procedures  
Read voltage  
VRead  
1.4  
V
Programming  
Voltage  
This device has built-in protection against high static  
voltages or electric fields; however, anti-static  
precautions must be taken as for any other CMOS  
component. Unless otherwise specified, proper operation  
can only occur when all terminal voltages are kept within  
the voltage range. Unused inputs must always be tied to  
a defined logic voltage level.  
VProg  
2.2  
V
EEPROM  
Programming Time  
TProg  
30  
ms  
Write/Erase  
Cycling  
5000  
cycles  
Table 6  
3
Electrical Characteristics  
Parameter  
Symbol  
Test Conditions  
VCC  
Temp. °C  
-40 to 125  
Min  
Typ  
Max  
Uni  
t
Total supply current with  
Crystal  
ICC  
All outputs open, Rs < 70  
kΩ, VBack = 0V  
1.4  
3.3  
5.0  
0.6  
0.8  
0.9  
4.6  
5.2  
5.5  
I2C: SDA, SCL at VCC  
,
-40 to 125  
-40 to 125  
µA  
Clk/Int=’0’  
SPI: All inputs at VSS  
Total supply current with  
Crystal  
IBack  
All outputs open, Rs < 70  
kΩ, VCC = 0V, VBack = 3.3V  
I2C: SDA, SCL at VBack  
Clk/Int=’0’  
SPI: All inputs at VSS  
SCL = 100kHz  
(See Note 1)  
SCL = 400kHz  
(See Note 1)  
SCL = 400kHz  
(See note 1)  
,
0
-40 to 125  
0.8  
5.2  
µA  
µA  
Dynamic current  
I2C  
IDD  
1.4  
3.3  
5.0  
-40 to 125  
-40 to 125  
-40 to 125  
15  
40  
60  
4
www.emmicroelectronic.com  
Copyright 2013, EM Microelectronic-Marin SA  
3027-DS.doc, Version 8.0, 25-Jan-13  
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