EM641FT8
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
V
CC
2)
V
SS
V
IH
V
IL
Min
4.5
0
2.2
-0.5
4)
Typ
-
0
-
-
Max
5.5
0
V
CC
+ 0.5
3)
0.6
Low Power, 512Kx8 SRAM
Unit
V
V
V
V
Notes :
1. TA= -40 to 85
o
C, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
Note :
Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC ELECTRICAL CHARACTERISTICS
(T
A
= -40
o
C to +85
o
C)
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IH
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS<0.2V, V
IN
<0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS=V
IL
, V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
I
OH
= -1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS>V
CC
-0.2V
Other inputs = 0~VCC
(Typ. condition : V
CC
=5V @ 25
o
C)
(Max. condition : V
CC
=5.5V @ 85
o
C)
45ns
55ns
70ns
Test Conditions
Min
-1
-1
-
-
-
-
-
-
2.4
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
5
7
65
55
45
0.4
-
1
Unit
uA
uA
mA
mA
I
CC2
V
OL
V
OH
I
SB
mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
mA
Standby Current (CMOS)
I
SB1
LF
-
1.5
1)
20
uA
NOTES :
1.Typical values are measured at Vcc=5V, T
A
=25
o
C and not 100% tested.
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
