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EM78P259N 参数 Datasheet PDF下载

EM78P259N图片预览
型号: EM78P259N
PDF下载: 下载PDF文件 查看货源
内容描述: 8位OTP微 [8-Bit Microprocessor with OTP ROM]
分类和应用: OTP只读存储器
文件页数/大小: 88 页 / 2435 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM78P259N/260N  
8-Bit Microprocessor with OTP ROM  
6.12 Power-On Considerations  
Any microcontroller is not warranted to start operating properly before the power supply  
stabilizes in steady state. The EM78P259N/260N POR voltage range is 1.9 ~ 2.1V.  
Under customer application, when power is switched OFF, Vdd must drop below 1.9V  
and remains at OFF state for 10µs before power can be switched ON again.  
Subsequently, the EM78P259N/260N will reset and work normally. The extra external  
reset circuit will work well if Vdd rises fast enough (50ms or less). However, under  
critical applications, extra devices are still required to assist in solving power-on  
problems.  
6.12.1 Programmable WDT Time-Out Period  
The Option word (WDTPS) is used to define the WDT time-out period (18ms5 or  
4.5ms6). Theoretically, the range is from 4.5ms or 18ms. For most crystal or ceramic  
resonators, the lower the operation frequency is, the longer is the required set-up time.  
6.12.2 External Power-on Reset Circuit  
The circuit shown in the following figure implements an external RC to produce a reset  
pulse. The pulse width (time constant) should be kept long enough to allow Vdd to  
reach the minimum operating voltage. This circuit is used when the power supply has a  
slow power rise time. Because the current leakage from the /RESET pin is about ±5µA,  
it is recommended that R should not be greater than 40 K. This way, the voltage at Pin  
/RESET is held below 0.2V. The diode (D) acts as a short circuit at power-down. The  
“C” capacitor is discharged rapidly and fully. Rin, the current-limited resistor, prevents  
high current discharge or ESD (electrostatic discharge) from flowing into Pin /RESET.  
Vdd  
EM78P259N  
EM78P260N  
R
C
D
/RESET  
Rin  
Fig. 6-20 External Power-on Reset Circuit  
5
6
VDD=5V, WDT time-out period = 16.5ms ± 30%.  
VDD=3V, WDT time-out period = 18ms ± 30%.  
VDD=5V, WDT time-out period = 4.2ms ± 30%.  
VDD=3V, WDT time-out period = 4.5ms ± 30%.  
Product Specification (V1.0) 06.16.2005  
65  
(This specification is subject to change without further notice)  
 
 
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