EM65101
128COM/160SEG 16 Gray Scale Level LCD Driver
In order to prevent the transient voltage from generating when an electronic volume
code is set, the circuit design is such that the set value is not reflected as a level
immediately. The value is reflected after the upper bits(DV6-DV4) of the electronic
code have been set. The set value becomes valid when the lower bits (DV3-DV0) of
the electronic control volume code have also been set.
NOTE
When writing code to set the electronic volume register, you must set DV6~DV4 first
before setting DV3~DV0.
8.2.14 Internal Register Read Address
D7 D6 D5 D4 D3 D2 D1 D0
RA3 RA2 RA1 RA0
CSB RS RDB WRB RE2 RE1 RE0
0
0
1
1
0
1
1
0
0
0
1
(At the time of reset: {RA3, RA2, RA1, RA0} = 7H, read address: 3H)
The RA register specifies the address for register read operation. The EM65101 has
many registers and one register bank. Therefore, the following 4-step procedure is
required to read the specific register.
(1) Write 01H to the RE register for accessing the RA register
(2) Writes the specific register address to the RA register
(3) Write the specific register bank to the RE register
(4) Read specific contents
8.2.15 Resistance Ratio of the CR Oscillator
D7 D6 D5 D4 D3 D2 D1 D0
RF3 RF2 RF1 RF0
CSB RS RDB WRB RE2 RE1 RE0
0
1
0
1
0
1
1
0
0
0
1
(At the time of reset: {RF3, RF2, RF1, RF0} = 0H, read address: 8H)
The RF registers can control the resistance ratio of the CR oscillator. Therefore the
frame frequency can change the settings at the RF registers.
When changing the RF registers, make sure to check the LCD display quality.
RF3
0
RF2
0
RF1
0
RF0
0
Operation
Initial Resistance Ratio
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0.52 times of initial Resistance Ratio
0.60 times of initial Resistance Ratio
0.68 times of initial Resistance Ratio
0.74 times of initial Resistance Ratio
0.80 times of initial Resistance Ratio
0.88 times of initial Resistance Ratio
0.94 times of initial Resistance Ratio
1.06 times of initial Resistance Ratio
1.12 times of initial Resistance Ratio
1.20 times of initial Resistance Ratio
1.28 times of initial Resistance Ratio
1.36 times of initial Resistance Ratio
1.44 times of initial Resistance Ratio
1.52 times of initial Resistance Ratio
1.60 times of initial Resistance Ratio
Product Specification (V0.4) 08.15.2005
• 55
(This specification is subject to change without further notice)
ELAN [ ELAN MICROELECTRONICS CORP ]
