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EM39LV040-55FDC 参数 Datasheet PDF下载

EM39LV040-55FDC图片预览
型号: EM39LV040-55FDC
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ( 512Kx8 )位闪存 [4M (512Kx8) Bits Flash Memory]
分类和应用: 闪存
文件页数/大小: 21 页 / 381 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV040  
4M (512Kx8) Bits Flash Memory  
SPECIFICATION  
General Description  
The EM39LV040 is a 4M bits Flash memory organized as 512K x 8 bits. The EM39LV040  
uses a single 3.0 volt-only power supply for both Read and Write functions. Featuring high  
performance Flash memory technology, the EM39LV040 provides a typical Byte-Program  
time of 11 µsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or  
Data# Polling to detect the completion of the Program or Erase operation. To protect against  
inadvertent write, the device has on-chip hardware and software data protection schemes.  
The device offers typical 100,000 cycles endurance and a greater than 10 years data retention.  
The EM39LV040 conforms to JEDEC standard pin outs for x8 memories. It is offered in  
package types of 32-lead PLCC, 32-pin TSOP, and known good die (KGD). For KGD, please  
contact ELAN Microelectronics or its representatives for detailed information (see Appendix at  
the bottom of this specification for Ordering Information).  
The EM39LV040 devices are developed for applications that require memories with  
convenient and economical updating of program, data or configurations, e.g., Networking  
cards, CD-RW, Scanner, Digital TV, Electronic Books, GPS, Router/Switcher, etc.  
Features  
End-of-Program or End-of-Erase  
Detection  
Single Power Supply  
Full voltage range from 2.7 to 3.6 volts  
for both read and write operations  
Data# Polling  
Toggle Bit  
Regulated voltage range: 3.0 to 3.6 volts  
for both read and write operations  
Sector-Erase Capability  
CMOS I/O Compatibility  
JEDEC Standard  
Uniform 4Kbyte sectors  
Sector-Erase Capability  
Uniform 64Kbyte sectors  
Pin-out and software command sets  
compatible with single-power supply  
|Flash memory  
Read Access Time  
Access time: 45, 55, 70 and 90 ns  
Power Consumption  
High Reliability  
Active current: 5 mA (Typical)  
Standby current: 1 µA (Typical)  
Endurance cycles: 100K (Typical)  
Data retention: 10 years  
Package Option  
Erase/Program Features  
32-pin PLCC  
32-pin TSOP  
Sector-Erase Time: 40 ms (Typical)  
Chip-Erase Time:  
40 ms (Typical)  
Byte-Program Time: 11µs (Typical)  
Chip Rewrite Time: 6 seconds (Typical)  
This specification is subject to change without further notice. (07.22.2004 V1.0)  
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