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HM5225805BLTT-75 参数 Datasheet PDF下载

HM5225805BLTT-75图片预览
型号: HM5225805BLTT-75
PDF下载: 下载PDF文件 查看货源
内容描述: LVTTL 256M SDRAM接口的133 MHz / 100 MHz的4 Mword 】 16位】 4银行/ 8 - Mword 】 8位】 4银行/ 16 Mword 】 4位】 4银行PC / 133 , PC / 100 SDRAM [256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器PC时钟
文件页数/大小: 63 页 / 454 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5225165B/HM5225805B/HM5225405B-75/A6/B6  
DQM Control  
The DQM mask the DQ data. The DQMU and DQML mask the upper and lower bytes of the DQ data,  
respectively. The timing of DQMU/DQML is different during reading and writing.  
Reading: When data is read, the output buffer can be controlled by DQM, DQMU/DQML. By setting  
DQM, DQMU/DQML to Low, the output buffer becomes Low-Z, enabling data output. By setting DQM,  
DQMU/DQML to High, the output buffer becomes High-Z, and the corresponding data is not output.  
However, internal reading operations continue. The latency of DQM, DQMU/DQML during reading is 2  
clocks.  
Writing: Input data can be masked by DQM, DQMU/DQML. By setting DQM, DQMU/DQML to Low,  
data can be written. In addition, when DQM, DQMU/DQML is set to High, the corresponding data is not  
written, and the previous data is held. The latency of DQM, DQMU/DQML during writing is 0 clock.  
Reading  
CLK  
DQM,  
DQMU/DQML  
High-Z  
DQ (output)  
out 0  
l
out 1  
out 3  
= 2 Latency  
DOD  
Writing  
CLK  
DQM,  
DQMU/DQML  
DQ (input)  
in 3  
in 0  
in 1  
l
= 0 Latency  
DID  
Data Sheet E0082H10  
39  
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