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EDJ1108BABG-DG-E 参数 Datasheet PDF下载

EDJ1108BABG-DG-E图片预览
型号: EDJ1108BABG-DG-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
Electrical Conditions  
All voltages are referenced to VSS (GND)  
Execute power-up and Initialization sequence before proper device operation is achieved.  
Absolute Maximum Ratings  
Parameter  
Symbol  
VDD  
Rating  
Unit  
V
Notes  
1, 3  
1, 3  
1
Power supply voltage  
Power supply voltage for output  
Input voltage  
0.4 to +1.975  
0.4 to +1.975  
0.4 to +1.975  
0.4 to +1.975  
0.4 to 0.6 × VDD  
0.4 to 0.6 × VDDQ  
55 to +100  
1.0  
VDDQ  
VIN  
V
V
Output voltage  
VOUT  
VREFCA  
VREFDQ  
Tstg  
V
1
Reference voltage  
Reference voltage for DQ  
Storage temperature  
Power dissipation  
V
3
V
3
°C  
W
mA  
1, 2  
1
PD  
Short circuit output current  
IOUT  
50  
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods may affect reliability.  
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.  
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than  
0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.  
Caution  
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause  
permanent damage. The device is not meant to be operated under conditions outside the limits  
described in the operational section of this specification. Exposure to Absolute Maximum Rating  
conditions for extended periods may affect device reliability.  
Operating Temperature Condition  
Parameter  
Symbol  
TC  
Rating  
Unit  
Notes  
1, 2, 3  
Operating case temperature  
0 to +95  
°C  
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.  
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be  
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C  
under all operating conditions.  
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C  
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional  
conditions apply:  
a)  
Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to  
3.9µs. (This double refresh requirement may not apply for some devices.)  
b)  
If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to  
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit  
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).  
Data Sheet E1248E40 (Ver. 4.0)  
7