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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
CK, /CK crossing to DQS, /DQS crossing  
tDQSCK; rising edges only of CK and DQS  
tQSH; rising edges of DQS to falling edges of DQS  
tQSL; rising edges of / DQS to falling edges of /DQS  
tLZ (DQS), tHZ (DQS) for preamble/postamble (see tHZ (DQS), tLZ (DQS)  
RL Measured to this point  
CK  
/CK  
tDQSCK(min.)  
tDQSCK(min.)  
tDQSCK(min.)  
tDQSCK(min.)  
tLZ(DQS)(min.)  
tQSL  
tQSH  
tRPRE  
tRPST  
DQS, /DQS  
Early strobe  
Bit0  
Bit1  
Bit2  
Bit3  
Bit4  
Bit5  
Bit6  
Bit7  
tDQSCK(max.)  
tDQSCK(max.)  
tQSL  
tDQSCK(max.) tDQSCK(max.)  
tLZ(DQS)(max.)  
tHZ(DQS)(max.)  
tQSH  
tRPRE  
tRPST  
DQS, /DQS  
Late strobe  
Bit0  
Bit1  
Bit2  
Bit3  
Bit4  
Bit5  
Bit6  
Bit7  
Notes: Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min.) or tDQSCK(max.).  
Instead, rising strobe edge can vary between tDQSCK(min.) or tDQSCK(max.) within a burst.  
Likewise tLZ(DQS)(min.) and tHZ(DQS)(min.) are not tied to tDQSCK(min.) (early strobe case) and  
tLZ(DQS)(max.) and tHZ(DQS)(max.) are not tied to tDQSCK(max.) (late strobe case).  
The minimum pulse width of read preamble is defined by tRPRE(min.).  
The minimum pulse width of read preamble is defined by tRPST(min.).  
DDR3 Clock to Data Strobe Relationship  
Data Sheet E1248E40 (Ver. 4.0)  
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