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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
Additive Latency (MR1)  
A posted /CAS read or write command when issued is held for the time of the Additive Latency (AL) before it is  
issued inside the device. The read or write posted /CAS command may be issued with or without auto precharge.  
The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL).  
The value of AL is also added to compute the overall Write Latency (WL).  
MRS (1) bits A4 and A3 are used to enable Additive latency.  
MRS1  
A4  
0
A3  
0
AL*  
0 (posted CAS disabled)  
CL 1  
0
1
1
0
CL 2  
1
1
Reserved  
Note: AL has a value of CL 1 or CL 2 as per the CL value programmed in the /CAS latency MRS setting.  
Data Sheet E1248E40 (Ver. 4.0)  
83  
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