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EDJ1108BABG-AC-E 参数 Datasheet PDF下载

EDJ1108BABG-AC-E图片预览
型号: EDJ1108BABG-AC-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 148 页 / 1878 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1108BABG, EDJ1116BABG  
Asynchronous to Synchronous ODT Mode during Short CKE high and Short CKE Low Periods  
If the total time in precharge power-down state or idle state is very short, the transition periods for power-down entry  
and power-down exit may overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at  
the input may be synchronous OR asynchronous from the start of the power-down entry transition period to the end  
of the PD exit transition period (even if the entry period ends later than the exit period).  
If the total time in idle state is very short, the transition periods for power-down exit and power-down entry may  
overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at the input may be  
synchronous OR asynchronous from the start of the power-down exit transition period to the end of the power-down  
entry transition period.  
Note that in the bottom part of figure below it is assumed that there was no refresh command in progress when idle  
state was entered.  
CK  
/CK  
Command  
REF  
NOP NOP  
NOP NOP  
CKE  
tANPD  
tRFC  
PD entry transition period  
PD exit transition period  
tXPDLL  
tANPD  
short CKE low transition period  
CKE  
tANPD  
tXPDLL  
tXPDLL  
tANPD  
short CKE high transition period  
Transition Period for Short CKE Cycles with Entry and Exit Period Overlapping  
(AL = 0, WL = 5, tANPD = WL 1 = 4)  
Data Sheet E1248E40 (Ver. 4.0)  
141  
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