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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第88页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第89页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第90页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第91页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第93页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第94页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第95页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第96页  
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
[Self-Refresh Mode Summary]  
MR2  
Allowed operating temperature  
range  
A6  
0
A7  
0
Self-refresh operation  
for self-refresh mode  
Self-refresh rate appropriate for the Normal Temperature  
Range  
Normal (0°C to +85°C)  
Self-refresh rate appropriate for either the Normal or  
Extended Temperature Ranges. The DRAM must support  
Extended Temperature Range. The value of the SRT bit  
can effect self-refresh power consumption, please refer to  
the Self- refresh Current for details.  
ASR enabled (for devices supporting ASR and Normal  
Temperature Range). Self-refresh power consumption is  
temperature dependent  
Normal and Extended (0°C to  
+95°C)  
0
1
1
0
Normal (0°C to +85°C)  
ASR enabled (for devices supporting ASR and Extended  
Temperature Range). Self-refresh power consumption is  
temperature dependent  
Normal and Extended (0°C to  
+95°C)  
1
1
0
1
Illegal  
Dynamic ODT (Rtt_WR)  
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal  
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without  
issuing an MRS command. MR2 register locations A9 and A10 configure the Dynamic ODT settings. In Write  
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.  
Data Sheet E1375E50 (Ver. 5.0)  
92  
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