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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
Timing Values tXXXPDEN Parameters  
Status of DRAM  
Idle or Active  
Idle or Active  
Active  
Last Command before CKE_low  
Parameter  
tACTPDEN  
tPRPDEN  
tRDPDEN  
Parameter Value  
Unit  
nCK  
nCK  
nCK  
Activate  
1
1
Precharge  
READ/READA  
RL + 4 + 1  
WL + 4 + (tWR/tCK (avg))  
Active  
Active  
WRIT for BL8MRS, BL8OTF, BC4OTF tWRPDEN  
nCK  
nCK  
1
*
WL + 2 + (tWR/tCK  
WRIT for BC4MRS  
tWRPDEN  
(avg))*1  
Active  
Active  
Idle  
WRITA for BL8MRS, BL8OTF, BC4OTF tWRAPDEN  
WL + 4 + WR*2 + 1  
nCK  
nCK  
nCK  
WRITA for BC4MRS  
Refresh  
tWRAPDEN  
tREFPDEN  
tMRSPDEN  
WL + 2 + WR*2 + 1  
1
Idle  
Mode Register Set  
tMOD  
Notes: 1. tWR is defined in ns, for calculation of tWRPDEN, it is necessary to round up tWR / tCK to next integer.  
2. WR in clock cycles as programmed in mode register.  
Power-Down Entry and Exit Clarification  
Case 1:  
When CKE registered low for power-down entry, tPD must be satisfied before CKE can be registered high for power-  
down exit.  
Case 1a:  
After power-down exit, tCKE must be satisfied before CKE can be registered low again.  
T0  
T1  
Tn  
Tn+1  
Tx  
Ty  
CK  
/CK  
tIH  
tIH  
CKE  
tIS  
tIS  
tPD  
tCPDED  
NOP NOP NOP  
tCKE  
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP  
N
Command  
Exit power-down  
Enter power-down  
Power-Down Entry/Exit Clarifications (1)  
Data Sheet E1375E50 (Ver. 5.0)  
130  
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