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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11 T12  
T13  
CK  
/CK  
Command*3  
Address*4  
NOP  
tCCD  
NOP  
WRIT  
WRIT  
tWR  
tBL = 4 clocks  
tWTR  
Bank  
Col n  
Bank  
Col b  
tWPRE  
tWPST  
tWPRE  
tWPST  
DQS, /DQS  
DQ*2  
Din Din Din Din  
n+1 n+2 n+3  
Din Din Din Din  
b+1 b+2 b+3  
n
b
WL = 5  
WL = 5  
Notes: 1. BC4, WL = 5 (CWL = 5, AL = 0)  
2. Din n (or b) = data-in from column n (or column b).  
VIH or VIL  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BC4 setting activated by either MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0 and T4.  
WRITE (BC4) to WRITE (BC4) OTF  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11 T12  
T13  
T14  
CK  
/CK  
Command*3  
Address*4  
WRIT  
READ  
NOP  
NOP  
tWTR  
Bank  
Col n  
Bank  
Col b  
tWPRE  
tWPST  
DQS, /DQS  
DQ*2  
Din Din Din Din Din Din Din Din  
n+1 n+2 n+3 n+4 n+5 n+6 n+7  
n
WL = 5  
RL = 5  
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)  
2. Din n = data-in from column n; DOUT b = data-out from column b.  
VIH or VIL  
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.  
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.  
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.  
WRITE (BL8) to READ (BC4/BL8) OTF  
Data Sheet E1375E50 (Ver. 5.0)  
116  
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