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EDE5104AGSE-5C-E 参数 Datasheet PDF下载

EDE5104AGSE-5C-E图片预览
型号: EDE5104AGSE-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 65 页 / 657 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5104AGSE, EDE5108AGSE  
Asynchronous CKE Low Event  
DRAM requires CKE to be maintained high for all valid operations as defined in this data sheet. If CKE  
asynchronously drops low during any valid operation DRAM is not guaranteed to preserve the contents of array. If  
this event occurs, memory controller must satisfy DRAM timing specification tDELAY before turning off the clocks.  
Stable clocks must exist at the input of DRAM before CKE is raised high again. DRAM must be fully re-initialized  
(steps 4 through 13) as described in initialization sequence. DRAM is ready for normal operation after the  
initialization sequence. See AC Characteristics table for tDELAY specification  
Stable clocks  
tCK  
/CK  
CK  
tDELAY  
CKE  
CKE asynchronously  
drops low  
Clocks can be  
turned off after  
this point  
Preliminary Data Sheet E0715E20 (Ver. 2.0)  
60  
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