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EDD5108ADTA-6BL-E 参数 Datasheet PDF下载

EDD5108ADTA-6BL-E图片预览
型号: EDD5108ADTA-6BL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M比特DDR SDRAM [512M bits DDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 49 页 / 549 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD5104ADTA-E, EDD5108ADTA-E, EDD5116ADTA-E  
A Write command to the consecutive Read command interval: To interrupt the write operation  
Destination row of the consecutive read  
command  
Bank  
address  
Row address State  
Operation  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
1. Same  
Same  
Different  
Any  
ACTIVE  
2. Same  
—*1  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
3. Different  
ACTIVE  
IDLE  
—*1  
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write  
operation in this case.  
WRITE to READ Command Interval (Same bank, same ROW address)  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
Command  
WRIT  
READ  
NOP  
1 cycle  
CL=2  
DM  
High-Z  
High-Z  
DQ  
out0 out1 out2 out3  
in0 in1  
in2  
DQS  
BL = 4  
CL= 2  
Data masked  
[WRITE to READ delay = 1 clock cycle]  
Preliminary Data Sheet E0501E10 (Ver. 1.0)  
33  
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