EDD1204ALTA, EDD1208ALTA, EDD1216ALTA
16. Revision History
Version /
Page
Description
Location
Date
This edition Previous
edition
Type of
revision
Ver. 1.0 /
April. 2001
Ver. 2.0 /
May. 2001
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29
36
41
42
46
55
56
60
65
66
69
70
38
39
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27
29
36
41
42
46
55
56
60
65
66
69
70
38
39
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Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Modification
Addition
Figure of Write to Precharge Command Interval
Figure of Write with Auto precharge
Figure of Precharge Termination in Write Cycle
tCK (CL = 2.5) (MIN.) : 8 ns to 10 ns
tWR (MIN.) : 15/15/15 ns to 2/2/2 CLK
AC Parameters for Write Timing
Random Column Write (1/2)
Random Column Write (2/2)
Random Row Write (2/2)
Interleaved Column Write Cycle (1/2)
Interleaved Column Write Cycle (2/2)
Auto Precharge after Write Burst (1/2)
Auto Precharge after Write Burst (2/2)
DC Characteristics specification
Ver. 3.0
October 2001
Modification
VIH (ac) (MIN.): VREF + 0.35 to VREF + 0.31
VIL (ac) (MAX.): VREF + 0.35 to VREF - 0.31
tHP (MIN.): tCH, tCL to MIN. (tCH, tCL)
41
42
42
45
41
42
42
45
Modification
Modification
Modification
Modification
tWPRE (MIN.) (tCK = 7.5ns): 0.25 ns to 1.88 ns
tDAL (MIN.): TBD to 35 ns
[tDAL]: to 5/5/5/4/4/4
76
Preliminary Data Sheet E0136E30
ELPIDA [ ELPIDA MEMORY ]
