EBJ21EE8BAFA
Self-Refresh Current (TC = 0°C to +85°C, VDD = 1.5V ± 0.075V)
Parameter
Symbol
max.
Unit
mA
Notes
Self-refresh current
normal temperature range
IDD6
180
Self-refresh current
extended temperature range
IDD6ET
IDD6TC
324
324
mA
mA
Auto self-refresh current
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR3-1333
DDR3-1066
6-6-6
6
DDR3-800
Parameter
8-8-8
8
9-9-9
9
7-7-7
7
8-8-8
8
5-5-5
5
6-6-6
6
Unit
tCK
ns
CL (IDD)
tCK min.(IDD)
tRCD min. (IDD)
tRC min. (IDD)
tRAS min.(IDD)
tRP min. (IDD)
tFAW (IDD)
1.5
12
1.5
1.875
11.25
48.75
37.5
1.875
13.13
50.63
37.5
13.13
37.5
7.5
1.875
15
2.5
12.5
50
2.5
15
13.5
49.5
36
ns
48
52.50
37.5
15
52.5
37.5
15
ns
36
37.5
12.5
40
ns
12
13.5
30
11.25
37.5
ns
30
37.5
7.5
40
ns
tRRD (IDD)
6.0
110
6.0
7.5
10
10
ns
tRFC (IDD)
110
110
110
110
110
110
ns
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
(DDR3 SDRAM Component Specification)
Parameter
Symbol
ILI
Value
Unit
Notes
Input leakage current
Output leakage current
2
5
µA
µA
VDD ≥ VIN ≥ VSS
ILO
DDQ ≥ VOUT ≥ VSS
Preliminary Data Sheet E1235E20 (Ver. 2.0)
14
ELPIDA [ ELPIDA MEMORY ]
