欢迎访问ic37.com |
会员登录 免费注册
发布采购

EBJ21EE8BAFA-8A-E 参数 Datasheet PDF下载

EBJ21EE8BAFA-8A-E图片预览
型号: EBJ21EE8BAFA-8A-E
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM Module, 256MX72, CMOS, ROHS COMPLIANT, DIMM-240]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 19 页 / 202 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第2页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第3页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第4页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第5页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第6页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第7页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第8页浏览型号EBJ21EE8BAFA-8A-E的Datasheet PDF文件第9页  
PRELIMINARY DATA SHEET  
2GB Unbuffered DDR3 SDRAM DIMM  
EBJ21EE8BAFA (256M words × 72 bits, 2 Ranks)  
Specifications  
Features  
Density: 2GB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 8 bits  
prefetch pipelined architecture  
256M words × 72 bits, 2 ranks  
Mounting 18 pieces of 1G bits DDR3 SDRAM sealed  
in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Power supply: VDD = 1.5V ± 0.075V  
Data rate: 1333Mbps/1066Mbps/800Mbps (max.)  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Data mask (DM) for write data  
Interface: SSTL_15  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Burst lengths (BL): 8 and 4 with Burst Chop (BC)  
/CAS Latency (CL): 5, 6, 7, 8, 9  
/CAS write latency (CWL): 5, 6, 7  
On-Die-Termination (ODT) for better signal quality  
Synchronous ODT  
Dynamic ODT  
Precharge: auto precharge option for each burst  
access  
Asynchronous ODT  
Refresh: auto-refresh, self-refresh  
Refresh cycles  
Multi Purpose Register (MPR) for temperature read  
out  
ZQ calibration for DQ drive and ODT  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Programmable Partial Array Self-Refresh (PASR)  
/RESET pin for Power-up sequence and reset  
Operating case temperature range  
TC = 0°C to +95°C  
function  
SRT range:  
Normal/extended  
Auto/manual self-refresh  
Programmable Output driver impedance control  
Class B temperature sensor functionality with  
EEPROM  
Document No. E1235E20 (Ver. 2.0)  
Date Published July 2008 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2007-2008