EBJ10EE8BAFA
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR3-1333
9-9-9
9
DDR3-1066
7-7-7
7
DDR3-800
6-6-6
6
Parameter
Unit
tCK
ns
CL (IDD)
tCK min.(IDD)
tRCD min. (IDD)
tRC min. (IDD)
tRAS min.(IDD)
tRP min. (IDD)
tFAW (IDD)
1.5
1.875
13.13
50.63
37.5
2.5
13.5
49.5
36
15
ns
52.5
37.5
15
ns
ns
13.5
30
13.13
37.5
ns
40
ns
tRRD (IDD)
6.0
7.5
10
ns
tRFC (IDD)
110
110
110
ns
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
(DDR3 SDRAM Component Specification)
Parameter
Symbol
ILI
Value
Unit
Notes
Input leakage current
Output leakage current
2
5
µA
µA
VDD ≥ VIN ≥ VSS
DDQ ≥ VOUT ≥ VSS
ILO
Data Sheet E1237E40 (Ver. 4.0)
13
ELPIDA [ ELPIDA MEMORY ]
