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EBE51RC4AAFA-5C-E 参数 Datasheet PDF下载

EBE51RC4AAFA-5C-E图片预览
型号: EBE51RC4AAFA-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 注册512MB DDR2 SDRAM DIMM [512MB Registered DDR2 SDRAM DIMM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 22 页 / 193 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET  
512MB Registered DDR2 SDRAM DIMM  
EBE51RC4AAFA (64M words × 72 bits, 1 Rank)  
Description  
Features  
The EBE51RC4AAFA is a 64M words × 72 bits, 1 rank  
DDR2 SDRAM Module, mounting 18 pieces of DDR2  
SDRAM sealed in FBGA package. Read and write  
operations are performed at the cross points of the CK  
and the /CK. This high-speed data transfer is realized  
by the 4bits prefetch-pipelined architecture. Data  
strobe (DQS and /DQS) both for read and write are  
available for high speed and reliable data bus design.  
By setting extended mode register, the on-chip Delay  
Locked Loop (DLL) can be set enable or disable. This  
module provides high density mounting without utilizing  
surface mount technology. Decoupling capacitors are  
mounted beside each FBGA on the module board.  
240-pin socket type dual in line memory module  
(DIMM)  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Lead-free  
1.8V power supply  
Data rate: 533Mbps/400Mbps (max.)  
1.8 V (SSTL_18 compatible) I/O  
Double-data-rate architecture: two data transfers per  
clock cycle  
Bi-directional, data strobe (DQS and /DQS) is  
transmitted /received with data, to be used in  
capturing data at the receiver  
Note: Do not push the components or drop the  
modules in order to avoid mechanical defects,  
which may result in electrical defects.  
DQS is edge aligned with data for READs; center  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
referenced to both edges of DQS  
Four internal banks for concurrent operation  
(Component)  
Burst length: 4, 8  
/CAS latency (CL): 3, 4, 5  
Auto precharge option for each burst access  
Auto refresh and self refresh modes  
7.8µs average periodic refresh interval  
Posted CAS by programmable additive latency for  
better command and data bus efficiency  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
operation  
1 piece of PLL clock driver, 2 pieces of register driver  
and 1 piece of serial EEPROM (2k bits EEPROM) for  
Presence Detect (PD)  
Document No. E0471E11 (Ver. 1.1)  
Date Published February 2006 (K) Japan  
URL: http://www.elpida.com  
This product became EOL in April, 2005.  
Elpida Memory, Inc. 2004-2006