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EBE51FD8AHFT-5C-E 参数 Datasheet PDF下载

EBE51FD8AHFT-5C-E图片预览
型号: EBE51FD8AHFT-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB全缓冲DIMM [512MB Fully Buffered DIMM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 22 页 / 187 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET  
512MB Fully Buffered DIMM  
EBE51FD8AHFT  
EBE51FD8AHFE  
EBE51FD8AHFL  
Specifications  
Features  
Density: 512MB  
Organization  
JEDEC standard Raw Card A Design  
Industry Standard Advanced Memory Buffer (AMB)  
64M words × 72 bits, 1 rank  
High-speed differential point-to-point link interface at  
1.5V (JEDEC draft spec)  
Mounting 9 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
14 north-bound (NB) high speed serial lanes  
10 south-bound (SB) high speed serial lanes  
Various features/modes:  
Package  
240-pin fully buffered, socket type dual in line  
memory module (FB-DIMM)  
MemBIST and IBIST test functions  
PCB height: 30.35mm  
Transparent mode and direct access mode for  
DRAM testing  
Lead pitch: 1.00mm  
Advanced Memory Buffer (AMB): 655-ball FCBGA  
Lead-free (RoHS compliant)  
Interface for a thermal sensor and status indicator  
Channel error detection and reporting  
Power supply  
Automatic DDR2 SDRAM bus and channel  
calibration  
DDR2 SDRAM: VDD = 1.8V ± 0.1V  
AMB: VCC = 1.5V + 0.075V/0.045  
Data rate: 667Mbps/533Mbps (max.)  
SPD (serial presence detect) with 1piece of 256 byte  
serial EEPROM  
Four internal banks for concurrent operation  
(components)  
Note: Warranty void if removed DIMM heat  
spreader.  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
Precharge: auto precharge option for each burst  
access  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Performance  
FB-DIMM  
DDR2 SDRAM  
System clock  
frequency  
Peak channel  
throughput  
Speed grade  
PC2-5300F  
PC2-4200F  
FB-DIMM link data rate  
4.0Gbps  
Speed Grade  
DDR data rate  
667Mbps  
167MHz  
133MHz  
8.0GByte/s  
6.4GByte/s  
DDR2-667 (5-5-5)  
DDR2-533 (4-4-4)  
3.2Gbps  
533Mbps  
Document No. E1002E30 (Ver. 3.0)  
Date Published February 2007 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2006-2007