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EBE51FD8AHFE-6E-E 参数 Datasheet PDF下载

EBE51FD8AHFE-6E-E图片预览
型号: EBE51FD8AHFE-6E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB全缓冲DIMM [512MB Fully Buffered DIMM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 22 页 / 187 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE51FD8AHFT, EBE51FD8AHFE, EBE51FD8AHFL  
Notes: 1. For details, refer to the JEDEC specification “FB-DIMM High Speed Differential PTP Link at 1.5V”.  
2. Specified at the package pins into a timing and voltage compliant test setup. Note that signal levels at the  
pad will be lower than at the pin.  
3. Single-ended voltages below that value that are simultaneously detected on D+ and D- are interpreted as  
the Electrical Idle condition. Worst-case margins are determined by comparing EI levels with common  
mode levels during normal operation for the case with transmitter using small voltage swing.  
4. Multiple lanes need to detect the EI condition before the device can act upon the EI detection.  
5. Specified at the package pins into a timing and voltage compliance test setup.  
6. Receiver designers may implement either single-ended or differential EI detection. Receivers must meet  
the specification that corresponds to the implemented detection circuit.  
7. This specification, considered with VTX-IDLE-SE-DC, implies a maximum 15mV single-ended DC offset  
between TX and RX pins during the electrical idle condition. This in turn allows a ground offset between  
adjacent FB-DIMM agents of 26mV when worst case termination resistance matching is considered.  
8. The single-pulse mask provides sufficient symbol energy for reliable RX reception. Each symbol must  
comply with both the single-pulse mask and the cumulative eye mask.  
9. The relative amplitude ratio limit between adjacent symbols prevents excessive inter-symbol interference  
in the Rx. Each symbol must comply with the peak amplitude ratio with regard to both the preceding and  
subsequent symbols.  
10. This number does not include the effects of SSC or reference clock jitter.  
11. This number includes setup and hold of the RX sampling flop.  
12. Defined as the dual-dirac deterministic timing error.  
13. Allows for 15mV DC offset between transmit and receive devices.  
14. The received differential signal must satisfy both this ratio as well as the absolute maximum AC peak-to-  
peak common mode specification. For example, if VRX-DIFFp-p is 200mV, the maximum AC peak-to-  
peak common mode is the lesser of (200mV × 0.45 = 90mV) and VRX-CM-ACp-p.  
15. One of the components that contribute to the deterioration of the return loss is the ESD structure which  
needs to be carefully designed.  
16. The termination small signal resistance; tolerance across voltages from 100mV to 400mV shall not  
exceed ± 5Ω. with regard to the average of the values measured at 100mV and at 400mV for that pin.  
17. This number represents the lane-to-lane skew between TX and RX pins and does not include the  
transmitter output skew from the component driving the signal to the receiver. This is one component of  
the end-to-end channel skew in the AMB specification.  
18. Measured from the reference clock edge to the center of the input eye. This specification must be met  
across specified voltage and temperature ranges for a single component. Drift rate of change is  
significantly below the tracking capability of the receiver.  
19. This bandwidth number assumes the specified minimum data transition density. Maximum jitter at 0.2MHz  
is 0.05UI.  
20. The specified time includes the time required to forward the EI entry condition.  
21. BER per differential lane.  
Preliminary Data Sheet E1002E30 (Ver. 3.0)  
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