EBE42FE8ACFR
Electrical Specifications
• All voltages are referenced to VSS (GND).
Absolute Maximum Ratings
Parameter
Symbol
VIN/VOUT
VCC
Value
Unit
Note
Voltage on any pin relative to VSS
AMB core power voltage relative to VSS
–0.3 to +1.75
–0.3 to +1.75
–0.5 to +2.30
–0.5 to +2.30
–55 to +100
V
V
DRAM interface power voltage relative to VSS VDD
V
Termination voltage relative to VSS
Storage temperature
VTT
Tstg
V
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Conditions
Parameter
Symbol
Value
0 to +95
110
Unit
°C
Note
1
SDRAM component case temperature
AMB component case temperature
TC_DRAM
TC_AMB
°C
Note: 1. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature self-refresh entry via the control of
EMRS (2) bit A7 is required.
DC Operating Conditions
Parameter
Symbol
VCC
min.
1.455
1.7
typ.
1.50
1.8
max.
Unit
V
Note
AMB supply voltage
1.575
DDR2 SDRAM supply voltage VDD
1.9
V
Input termination voltage
EEPROM supply voltage
SPD input high voltage
SPD input low voltage
RESET input high voltage
RESET input low voltage
Leakage current (RESET)
Leakage current (link)
VTT
0.48 × VDD 0.50 × VDD
0.52 × VDD
V
VDDSPD
VIH (DC)
VIL (DC)
VIH (DC)
VIL (DC)
IL
3.0
2.1
—
3.3
—
—
—
—
—
—
3.6
V
VDDSPD
V
1
1
2
2
2
3
0.8
—
0.5
90
5
V
1.0
—
V
V
–90
–5
µA
µA
IL
Notes: 1. Applies for SMB and SPD bus signals.
2. Applies for AMB CMOS signal /RESET.
3. For all other AMB related DC parameters, please refer to the high-speed differential link interface
specification.
Data Sheet E1328E30 (Ver. 3.0)
10
ELPIDA [ ELPIDA MEMORY ]
