EBE41FE4ABHT, EBE41FE4ABHL
Byte No. Function described
Byte value
Hex value
00H
12H
00H
××
42 to 78
79
Reserved
FB-DIMM ODT values
150/75Ω
80
Reserved
81 to 93
94 to 97
98
AMB personality bytes
Reserved
00H
××
AMB junction temperature maximum (TJ (max.))
99
Category byte
Reserved
Stack/FDHS
1AH
00H
××
100
101 to 116 AMB personality bytes
117
118
119
120
121
Module ID: manufacturer’s JEDEC ID code
Elpida Memory
Elpida Memory
02H
FEH
××
Module ID: manufacturer’s JEDEC ID code
Module ID: manufacturing location
Module ID: manufacturing date
Year code (BCD)
Date code (BCD)
××
Module ID: manufacturing date
××
122 to 125 Module ID: module serial number
126 to 127 Cyclical redundancy code
128 to 145 Module part number
××
××
EBE41FE4ABHT/L
Initial
××
146
147
148
149
150
151
Module revision code
30H
20H
02H
FEH
××
Module revision code
(Space)
SDRAM manufacturer’s JEDEC ID code
SDRAM manufacturer’s JEDEC ID code
Informal AMB content revision tag (MSB)
Informal AMB content revision tag (LSB)
Elpida Memory
Elpida Memory
××
152 to 175 Manufacturer's specific data
176 to 255 Open for customer use
00H
00H
Remark IDD: DRAM current, ICC: AMB current
Notes: 1. Based on DDR2 SDRAM component specification.
2. Refer to JESD51-3 “Low effective thermal conductivity Test board for leaded surface mount packages”
under JESD51-2 standard.
3. DT parameter is derived as following: DTx = IDDx × VDD × Psi T-A, where IDDx definition is based on
JEDEC DDR2 SDRAM component specification and at VDD=1.9V, it is the datasheet (worst case) value,
and Psi T-A is the programmed value of Psi T-A (value in SPD Byte 33).
Preliminary Data Sheet E1010E20 (Ver. 2.0)
19
ELPIDA [ ELPIDA MEMORY ]
